منابع مشابه
Enhanced Light Emission from Large-Area Monolayer MoS2 Using Plasmonic Nanodisc Arrays
Single-layer direct band gap semiconductors such as transition metal dichalcogenides are quite attractive for a wide range of electronics, photonics, and optoelectronics applications. Their monolayer thickness provides significant advantages in many applications such as field-effect transistors for high-performance electronics, sensor/ detector applications, and flexible electronics. However, f...
متن کاملThermal conductivity of bulk and monolayer MoS2
We show that the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800K. Since theoretical insight into the lattice contribution is largely missing, though it would be essential for materials design, we solve the Boltzmann transport equation for the phonons self-consistently in order to evaluate the phon...
متن کاملAtomically Flat Zigzag Edges in Monolayer MoS2 by Thermal Annealing.
The edges of 2D materials show novel electronic, magnetic, and optical properties, especially when reduced to nanoribbon widths. Therefore, methods to create atomically flat edges in 2D materials are essential for future exploitation. Atomically flat edges in 2D materials are found after brittle fracture or when electrically biasing, but a simple scalable approach for creating atomically flat p...
متن کاملUltrastrong light-matter coupling of cyclotron transition in monolayer MoS2
Benliang Li,1,2 Tao Liu,1 Daniel W. Hewak,2 Zexiang Shen,3 and Qi Jie Wang1,3,* 1Centre for OptoElectronics and Biophotonics (COEB), School of Electrical & Electronic Engineering & The Photonics Institute, Nanyang Technological University, 50 Nanyang Ave., Singapore, 639798 2Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom 3Centre for Disruptive P...
متن کاملEmerging photoluminescence in monolayer MoS2.
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quan...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2017
ISSN: 0935-9648
DOI: 10.1002/adma.201701304